Breast Cancer Detection Using Si-Doped MoS2 Channel-Based Thickness Engineered TFET Biosensor

This letter investigates the electrical performance characteristics for breast cancer cell line detection by developing the Si-doped molybdenum disulfide thickness engineered tunnel field effect transistor biosensor. A complete study of the electrostatic field is presented, including the surface potential, electric field, transconductance (gm), threshold voltage (Vth),oncurrent (ION), and subthreshold swing. The sensitivity is analyzed in terms of drain current (Ids), gm, Vth, ION, ION/IOFFratio, and gm. Further, this study investigates the impact of device geometry variations, specifically cavity thickness, and length on the sensitivity of drain current (S_Ids), transconductance (S_gₘ), threshold voltage (S_V_th), andoncurrent (S_I_ON). In addition, the impact of immobilized cell line occupancy on device performance has been examined. The presented biosensor is highly sensitive with increased cavity occupancy resulting in enhanced performance. As a result, array-based screening and diagnosis of breast cancer cells can be accomplished with the device, which is also economical and simpler to fabricate.