A new SPICE subcircuit model for power p-i-n diodes is proposed in this paper. The model is based on a moment-matching approximation of the ambipolar diffusion equation. It is shown that both the quasistatic model and the lumped charge model can be obtained as ion-order moment-matching approximations while new and more accurate models can be obtained from higher-order solutions. The proposed model takes into account emitter recombination in the highly doped end regions, conductivity modulation in the base and the moving-boundaries effect during reverse-recovery, showing good convergence properties and fast simulation times. Comparisons between the results of the SPICE model and both numerical device simulations and experimental results are presented.
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A.G.M. Strollo (1997) studied this question.
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