Graphitic Carbon Nitride Impregnated Niobium oxide (g-C3N4/Nb2O5) Type (II) Heterojunctions and its Synergetic Solar-Driven Hydrogen Generation

Graphitic carbon nitride (g-C 3 N 4 ) based catalysts are evolving in energy harvesting applications due to their robustness, nontoxicity, and most important photocatalytic efficiencies. In this work, we successfully engineered g-C 3 N 4 /Nb 2 O 5 type (II) heterojunction via pulse sonochemical technique based on opposite charge-induced heteroaggregation on the surface. The agglomerated spherical Nb 2 O 5 nanoparticles (NPs) having diameter 30–40 nm observed on the lamellar surface of g-C 3 N 4 in FESEM images. The XRD and XPS analysis confirm the orthorhombic phase and formation of the g-C 3 N 4 /Nb 2 O 5 heterostructure. The FTIR spectra of g-C 3 N 4 /Nb 2 O 5 show characteristic poly-s-triazine bands from 1250 to 1650 cm –1 . Moreover, g-C 3 N 4 /Nb 2 O 5 exhibited the lower bandgap value of 2.82 eV as compared to Nb 2 O 5 (3.25 eV) with significant redshift and enhance visible light absorption. The Mott–Schottky (MS) analysis confirms the formation of heterojunction between g-C 3 N 4 and Nb 2 O 5, with significant band shifting toward lower hydrogen evolution reaction (HER) potential. The g-C 3 N 4 /Nb 2 O 5 heterojunctions showed many folds enhanced photocurrent response from photoelectrochemical (PEC) water splitting, and the value reached to −0.17 mA/cm 2 with good stability and insignificant dark photocurrent at 1.0 V vs RHE. The electrochemical impedance spectroscopic (EIS) measurements further elucidate the suppression of photogenerated electrons/holes as the radius of the semicircle significantly decreased in case of heterojunction formation. The enhanced photocatalytic hydrogen generation by the heterostructures could be attributed to the effective formation of heterojunctions between the g-C 3 N 4 and Nb 2 O 5 semiconductors, causing the migration of the photogenerated electrons and holes, hence increasing their lifetimes.