A discussion of electrostatic scanning systems is given with respect to mechanical scanning, uniformity and current capabilities as they relate to ion implanters. Equations for the degradation of uniformity due to wafer tilt. misalignment and changing beam size are presented. Some commercial implantation scanning systems and related data are also presented along with a proposed high current electrostatic scanning system.
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John H. Keller (1979) studied this question.
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