Work on silicon crystal quality improvement and defect control has been carried out on lab‐scale seeded growth ingots allowing wafers with controlled grain orientations. Both <111> and <100> monocrystalline‐like ingots were produced using a combination of quartz rod dipping and a modulated conductive heat extraction system, made in‐house, in a directional solidification system. Two mono‐like wafer morphology types have been produced. Their structural and electrical properties are presented in detail.
No takes yet. Share an insight, caveat, or question.
Jouini et al. (2011) studied this question.
Synapse has enriched one closely related paper. Consider it for comparative context: