Photoelectrochemical application of GaN nanostructures on Si for hydrogen generation by water reduction

GaN nanostructures grown on n‐type Si (111) substrate were applied as photo‐illuminated working electrodes for photoelectrochemical water splitting. Photocurrent density increased with the density of GaN nanodots. The photocurrent density was, however, quite small compared to that of GaN nanorods and decreased with treated time. The current density of GaN nanorods was stable probably because the nanorod crystalline size was larger than that of the nanodots. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)