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We fabricated Cu2Sn1− x Ge x S3 (CTGS) solar cells with a graded bandgap structure in order to improve their photovoltaic performance. Bandgap gradation was formed by changing the Ge/Sn ratio in the depth direction of the CTGS layers. The composition profile of each sample was measured by secondary ion mass spectrometry, and we confirmed that the Ge/Sn ratio near the buffer layer was lower than that near the back electrode. This means that the bandgap increases with depth from the surface. The performance of the cells was improved to over 6.7% in conversion efficiency.
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Umehara et al. (2016) studied this question.
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