Efficient femtosecond laser micromachining of bulk 3C-SiC

We demonstrate surface micromachining of bulk 3C silicon carbide (3C-SiC) wafers by employing tightly focused infrared femtosecond laser pulses of energy less than 10 nJ directly from a femtosecond laser oscillator, thus eliminating the need for an amplified system and increasing the micromachining speed by more than four orders of magnitude. In addition, we show that high aspect ratio through-tapered vias can be drilled in 400 µm thick wafers using an amplified femtosecond laser.