Analysis of Crosstalk in Single- and Multiwall Carbon Nanotube Interconnects and Its Impact on Gate Oxide Reliability

This paper analyses the crosstalk effects in carbon nanotube (CNT) interconnect, and its impact on the gate oxide reliability. Using the existing models of CNT, circuit parameters for the single-wall CNT-bundle and multiwall CNT interconnects are calculated and the equivalent circuit has been developed to perform the crosstalk analysis. The crosstalk-induced overshoot/undershoots have been estimated and the impact of the overshoot/undershoots on the gate oxide reliability in terms of failure-in-time rate is calculated. A similar analysis is performed for Cu-based interconnects and comparisons are made with the results obtained for CNT-based interconnect. It has been found that the CNT-based interconnect is more suitable in VLSI circuits as far as the gate oxide reliability is concerned.