Answers are grounded in this paper and cite their sources.
Photoconductivity has been systematically studied in unintentionally doped n-type InN film with super-bandgap excitation (1.53 eV) at temperatures varying in the range of 100–300 K. A negative photoconductivity is observed at room temperature, whereas it gradually changes to be positive with decreasing temperature. Transition temperature from negative to positive photoconductivity is found to be greatly related to the residual electron concentration as the higher the electron concentration, the lower the transition temperature. An energy band model including a donor state with large lattice relaxation as well as a recombination center is proposed, which explains the experimental observation well.
No takes yet. Share an insight, caveat, or question.
Guo et al. (2013) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: