High quality Si/SiO2 interface and improved oxide reliability have been achieved on (111) Si substrate by introducing NF3 into the oxidation furnace. The interface properties and the radiation hardness of the fluorinated (111) metal oxide semiconductor capacitors have been studied as a function of the amount of NF3 introduced.
No takes yet. Share an insight, caveat, or question.
Wang et al. (1992) studied this question.
Synapse has enriched 5 related papers. Consider them for comparative context: