A technique is introduced for measuring electron and hole mobilities as a function of temperature and normal field in inverted silicon surfaces. We also introduce a new definition of threshold voltage which allows the method to measure mobility independent of channel dimensions and resistance in series with the channel. The results are used to extract the resistance in series with the channel, the effective channel dimensions, and the intrinsic MOSFET transconductance. The technique is demonstrated on MOSFETs with channel lengths ranging from 0.25 µm to 20 µm.
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El-Kareh et al. (1990) studied this question.
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