Experimental study reveals electrical characteristics of 1.2 kV silicon carbide power MOSFETs up to 250°C, highlighting their feasibility in harsh operating environments.
High temperature capability of silicon carbide (SiC) power MOSFETs is becoming more important as power electronics faces wider applications in harsh environments. In this paper, comprehensive static and dynamic parameters of 1.2 kV SiC MOSFETs have been measured up to 250°C. The electrical behaviors with the temperature have been analyzed using the basic device physics and analytical models.
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Liu et al. (2017) studied this question.
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