An efficient thin-film photovoltaic cell has been fabricated using the heterostructure consisting of a CuInS2 film obtained by sulfurization of a metallic precursor, a chemical-bath-deposited CdS layer, and an atom-beam-sputtered In2O3 film. A preceding KCN treatment of the Cu-rich CuInS2 film lowered the Cu/In ratio and raised the resistivity. A cell conversion efficiency of 9.7% (active area efficiency>10%) at air mass 1.5 has been achieved without antireflection coatings.
No takes yet. Share an insight, caveat, or question.
Ogawa et al. (1994) studied this question.
Synapse has enriched one closely related paper. Consider it for comparative context: