Answers are grounded in this paper and cite their sources.
The lowest energy electronic states of a donor located near a semiconductor-insulator-metal interface are investigated within the effective mass approach. The effect of the finite thickness of the insulator between the semiconductor and the metallic gate on the energy levels is studied. The lowest energy states are obtained through a variational approach, which takes into account the influence of all image charges that arise due to the presence of the metallic and the dielectric interfaces. We compare our results with a numerical exact calculation using the finite element technique.
No takes yet. Share an insight, caveat, or question.
Hao et al. (2009) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: