3C-SiC p-n structures grown by sublimation on 6H-SiC substrates

Sublimation epitaxy in a vacuum has been employed to grow n -and p -type 3 C -SiC layers on 6 H -SiC substrates. Diodes have been fabricated on the basis of the p-n structure obtained, and their parameters have been studied by measuring their current-voltage and capacitance-voltage characteristics and by applying the DLTS and electroluminescence methods. It is shown that the characteristics of the diodes studied are close to those of diodes based on bulk 3 C -SiC. A conclusion is made that sublimation epitaxy can be used to fabricate 3 C -SiC p-n structures on substrates of other silicon carbide polytypes.