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The effect of free edges on the thermal stress distribution in square-patterned GaAs/Si (100) is studied by three-dimensional finite-element elastic analysis. The results are discussed in comparison with previous analytical and numerical calculations. Finally the stress in the most important central portion of the square is calculated as a function of width to thickness ratio in the range 1 to 40. Results are presented in a form appropriate for interpretation of 4.2-K photoluminescence (PL) measurements and device optimization.
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Lingunis et al. (1991) studied this question.
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