One of the most promising materials for advanced optoelectronics and high power devices is gallium nitride (GaN). This potential, due to a unique combination of properties, makes a rational synthesis of nanosized GaN highly desirable. It has been found that gallium azides might offer a solution to this problem, since GaN nanocrystallites in a size range from 2 nm to 3000 nm can be prepared by detonations of gallium azides, the detonation energy determining the size of the nanocrystallites. Thus, explosivity, a commonly unwanted property, opens up opportunities for nanochemistry.
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Frank et al. (1998) studied this question.