Calculation of nonradiative multiphonon capture coefficients and ionization rates for neutral centres according to the static coupling scheme: I. Theory

Capture coefficients and ionization rates for nonradiative multiphonon transitions of charge carriers at neutral imperfections in semiconductors are calculated within the framework of the static coupling scheme. The temperature averaging connected with the thermal distribution of free carriers over the band states is performed on the basis of a three‐param‐etrical overlap‐factor formula which enables a reduction of the analytical expressions for the quantities in consideration to simple functions of five imperfection parameters.