Neutron interactions with terrestrial systems produce soft errors, increasing the failure-in-time (FIT) rate of advanced CMOS circuits. These neutron-induced errors are a critical reliability problem facing advanced technologies. This paper reports the accelerated neutron testing on a 90-nm CMOS SRAM that exhibits an increased multiple-bit upset FIT rate from neutrons at large angles of incidence. The modeling of these data is used to predict the reliability of ground-based systems.
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Tipton et al. (2008) studied this question.
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