X-ray photoelectron spectroscopy has been applied to study the electronic structure of the epitaxial Fe-doped SrTiO3 thin films with an Fe concentration of 1 and 2 at%. The results were compared to undoped thin films and lightly Fe-doped single crystal of SrTiO3. Fe doping was found to increase the amount of the in-gap states which can be related to the increased ability of Fe-doped thin films to exhibit resistive switching behaviour. Core level analysis indicates the mixed-valence character of Fe atoms in the films, with a divalent contribution situated on the surface.
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Szade et al. (2011) studied this question.
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