Transfer of Ultrathin Silicon Layers to Polycrystalline SiC Substrates for the Growth of 3C‐SiC Epitaxial Films

A novel approach for the production of large area 3C‐SiC substrates is described. Ultrathin (<20 nm) Si seed layers were transferred to high purity polycrystalline 3C‐SiC substrates through a unique wafer bonding process. The ultrathin Si seed layer was subsequently carbonized and used as the nucleation layer for high temperature (>1500°C) growth of epitaxial 3C‐SiC. The use of more optimal growth temperatures, not limited by the melting point of Si, led to 3C‐SiC films of high crystalline quality. Double crystal X‐ray diffraction measurements of the 3C‐SiC(200) reflection gave peak widths of 660 arcsec.