The oxidation behavior of a polymer‐derived amorphous silicon carbonitride (SiCN) ceramic was studied at temperature range of 900°–1200°C using fully dense samples, which were obtained using a novel pressure‐assisted pyrolysis technique. The oxidation kinetics was investigated by measuring the thickness of oxide layers. The data were found to fit a typical parabolic kinetics. The measured oxidation rate constant and activation energy of the SiCN are close to those of CVD and single‐crystal SiC. The results suggest that the oxidation mechanism of the SiCN is the same as that of SiC: oxygen diffusion through a silica layer.
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Bharadwaj et al. (2004) studied this question.
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