Electron scattering in AlGaN/GaN heterostructures with a two-dimensional electron gas

The temperature and concentration dependences of electron mobility in AlGaN/GaN hetero-structures are studied. The mobility for the samples under study at T = 300 K lies in the range of 450–1740 cm 2 /(V s). It is established that scattering at charged centers is dominant for samples with low mobility (lower than 1000 cm 2 /(V s) right up to room temperature. These centers are associated with a disordered piezoelectric charge at the heterointerface because of its roughness or with a piezoelectric charge similarly to the Al-GaN barrier because of alloy disorder, as well as with the deformation field around dislocations. Scattering at optical phonons is dominant for samples with mobility exceeding 1000 cm 2 /(V s) at T = 300 K. Scattering at alloy disorders, heterointerface roughness, and dislocations are dominant at temperatures lower than 200 K. A decrease in the influence of scattering at roughness with improvement of the heterointerface morphology increases room-temperature mobility from 1400 cm 2 /(V s) to 1700 cm 2 /(V s).