Impact of Engineered Ti Layer on the Memory Performance of HfO[sub x]-Based Resistive Memory

The impact of engineered Ti at the interface of HfO x / TiN on the performance of a HfO x resistive memory (RM) is investigated. Microstructures of 5 nm thick HfO x films seem insensitive to the bottom layer (BL) with/without Ti. The switching behavior of the HfO x RM depends on the position and the thickness of the Ti layer. More oxygen atoms in HfO x films are captured during the deposition of a Ti overlayer; this result leads to a Ti / HfO x device with lower forming voltage and initial resistance. A thick Ti BL ( 30 nm ) results in a HfO x / Ti device with yield of 100% and superior endurance ( 10 6 cycles ) .