This letter reports the demonstration of a nickel-silicide contact technology that achieves dual near-band-edge barrier heights (i.e., a low electron barrier height ΦBnfor n-FETs and a low hole barrier height ΦBpfor p-FETs) using just one additional masking and two ion-implant steps. Independent and effective tuning of contact resistanceRCis achieved in both p- and n-FinFETs. The compensation effect of aluminum and sulfur implants is studied for the first time and exploited for process simplification. A novel cost-effective integration scheme is shown to give significantIDSATenhancement for p- and n-FinFETs.
No takes yet. Share an insight, caveat, or question.
Sinha et al. (2010) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: