Characterizations of Antimony Tri‐Sulfide Chemically Deposited with Silicotungstic Acid

A new chemical deposition method has been developed to prepare photoconducting n ‐ Sb 2 S 3 thin polycrystalline films. The solution composition of the deposition bath was 0.025 M potassium antimonyl tartarate, 0.4 M triethanolamine, 0.025 M thioacetamide, and 5 × 10 − 7 M silicotungstic acid (STA), respectively. The as‐deposited and the annealed films were characterized through x‐ray diffraction, neutron activation analysis, and the optical absorption investigations. The photoelectrochemical performances of these films were examined. The best photoresponse was observed on the film prepared from a chemical bath containing 5 × 10 − 7 M STA.