An accurate extraction method for series resistance and capacitance based on RFS-parameter measurement in ultraleaky MOS devices is presented in this paper. The method is proven by using a three-element equivalent circuit model for a capacitor and a well-known microwave theory. The proposed method improves the measurement accuracy and significantly reduces the frequency-dependence of capacitance. This method is demonstrated for a 1.5 nm SiO2dielectric NMOSFET.
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Choi et al. (2008) studied this question.
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