The control of the critical current density (Jc) and the junction resistance (RN) along the c axis of intrinsic Josephson junctions (IJJs) on a high-Tc superconductor is very important for applying the IJJs to electronic devices. For controlling these junction parameters, we have clarified the relationship of Jc, RN, and the carrier density in Bi2Sr2CaCu2O8+δ (Bi-2212) whiskers by changing the carrier density with an annealing process. As a result, the Jc decreased, and the RN increased systematically when the carrier density decreased. The values of Jc and RN could be controlled by a change in the carrier density.
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Inomata et al. (2003) studied this question.
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