The electrical and thermal transport properties are characterized for layer-structured (ZnO) m In 2 O 3 ( m =5 and 9) (Z m IO) ceramics of near theoretical densities. The results of the low temperature Hall effect study suggested that the InO 2 - layers, which have oxygen defects, determine the carrier scattering mechanism of the material, and explain the previously demonstrated two-dimensional character of the carrier transport behavior. From an adaptation of the Wiedemann–Franz law, the lattice thermal conductivity (κ L ) of Z m IOs at 300 K is estimated to be ∼2.6 W/mK; this value is nearly one fifteenth of that for Al-doped ZnO ceramics (∼40 W/mK). These results suggest that the two-dimensional structure consisting of the InZn m O m +1 + and InO 2 - sub-lattices gives rise to the strong electrical anisotropy and the low κ L which is attributed to the reduced mean free path of the phonon, similar to artificial super-lattice materials.
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Hirano et al. (2002) studied this question.