A single-electron inverter based on the Coulomb blockade effects has been fabricated in multiwalled carbon nanotubes, by using the Ar irradiation method for the tunnel barrier formation in the quantum dots. The device characteristics were measured at 2.6 K, and an indication of inverter-like transfer characteristics has been obtained. The performance of the device was not completely satisfactory for the inverter operation in terms of the voltage gain and the voltage swing, but the present technique turns out to be useful for the fabrication of single-electron logic devices in carbon nanotubes.
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Ishibashi et al. (2003) studied this question.
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