Formation of Ge[sub 2]Sb[sub 2]Te[sub 5]–TiO[sub x] Nanostructures for Phase Change Random Access Memory Applications

Amorphous clusters with a size of 20 nm, self-enclosed by a thin layer of , were obtained by cosputtering and targets at room temperature with the aim of reducing the reset current for phase change random access memory applications. Eutectic decomposition during the deposition caused a phase separation of and . The temperature-dependent resistance change results showed that the activation energy for crystallization increased from to in the film. The set resistance can be tuned within an acceptable range, and the reliability of this microstructure during repetitive laser melt-quenching cycles was tested.