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Ridge-waveguide laser diodes based on beryllium chalcogenides have been realised. An extremely large temperature coefficient (T0 = 330 K at room temperature) allows device operation up to temperatures of 413 K. Lateral monomode emission is obtained with a ratio between the vertical and the lateral far field pattern of, for example, 1.2:1 for a stripe width of 1 µm.
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Legge et al. (1998) studied this question.
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