Cross-sectional CL measurements have been performed on the cleaved surface of the Al-ion implanted 4H-SiC. The strong L1 luminescence that originates from the DI defect has been observed even in the deep region (~10 μm) where implanted ions do not penetrate. In the implanted layer, CL results show that high-density non-radiative defects remain even after activation annealing. Generation of the DI defect in the deep region is presumably attributed to the diffusion of point defects from the implanted layer.
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Mitani et al. (2008) studied this question.