A strain-free ZnSe-Zn(S,Te): x≊0.37 heterointerface is proposed as an ideal structure for the confinement of a two-dimensional electron gas in ZnSe. The electron mobilities were calculated for this structure for the first time, including all major scattering mechanisms, and considering both intra- and inter-subband scattering processes. The dependence of the electron mobility at both 4.2 and 77 K on the areal density in the well was calculated. The peak inherent mobility limit was found to be about 3×105 and about 1×104 cm2/V s at 4.2 and 77 K, respectively.
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Harry E. Ruda (1986) studied this question.
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