Pioneering dielectric materials of Sn-doped Nb 0.025 Ti 0.975 O 2 ceramics with excellent temperature and humidity stability for advanced ceramic capacitors

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ions, which also affects the grain growth diffusion process in the Sn-NTO ceramics. The observed heterogeneous electrical responses between semiconducting grains and insulating grain boundaries in these polycrystalline ceramics are attributed to the internal barrier layer capacitor effect.