Defect characterization of InSb1−xNxgrown using radio frequency nitrogen plasma-assisted molecular beam epitaxy

We report the growth of InSb1−xNx using radio frequency nitrogen plasma-assisted molecular beam epitaxy and its characterization using visible wavelength Raman scattering and x-ray diffraction. The effects of the growth temperature (330–420 °C) and the plasma power (200–500 W) on the N-induced defects were studied. Sb antisite defects from the A1gSb mode are shown to be dominant at a high growth temperature and a low plasma power. On the other hand, the high growth temperature and high plasma power induce the formation of interstitial Sb–N defects. A reduction in Sb related defects is observed at the lowest substrate temperature (330 °C) and plasma power (200 W). Based on the experimental results, a possible mechanism of defect formation is suggested.