The growth process and the optical, luminescence, and scintillation characteristics of the composition-engineered Gd 2.88 Sc 1.89 Al 3.23 O 12 (GSAG) single crystal doped with 0.1% Pr 3+ and 0.1, 0.2, and 0.3% Ce 3+ grown by the μ-PD method are investigated. The GSAG:Ce single-crystal scintillator grown in Mo crucible is evaluated for the first time. The comparison of the scintillation properties of GSAG:Ce using Mo and Ir technologies is presented. The effect of annealing in air and Mg 2+ codoping is also discussed. In the case of the Ce dopant, the favorable combination of ultralow afterglow, fast scintillation response, and high-density host together with a cheaper preparation technology makes these materials competitive and promising for a wide range of applications.
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Zapadlík et al. (2021) studied this question.
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