⌘+K

Pulse Explore Communities Researchers Journals

Home Communities Explore

March 1, 1995Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena

Enhancement in emission current from dry-processed n-type Si field emitter arrays after tip anodization

M. Takai Masahiro Yamashita Hans‐Christian Wille Shinsuke Yura S. Horibata Masafumi Ototake

View at Publisher

Ask AI

Bookmark

Share

Abstract

n-type porous Si field emitter arrays (FEAs) have been fabricated by tip surface anodization to improve the emission characteristics. The gate voltage required for emission could be lowered by tip anodization and the emission current was enhanced by a factor of up to 10. Fowler-Nordheim plots for the FEAs before and after tip anodization revealed that the work function of the tips could be decreased and the emission from various FEAs with initially different characteristics could be homogeneously improved by tip surface anodization.

Discussion

No takes yet. Share an insight, caveat, or question.

Cite This Study

Takai et al. (1995) studied this question.

synapsesocial.com/papers/6ab2087a6ccf24c78297174d https://doi.org/10.1116/1.587966

View at Publisher

Ask AI

Bookmark

Share

Keep reading

Synapse has enriched 5 related papers. Consider them for comparative context:

1Fabrication of a seamless roll mold by direct writing with an electron beam on a rotating cylindrical substrateJournal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2009
2High density plasma etching of titanium nitride metal gate electrodes for fully depleted silicon-on-insulator subthreshold transistor integrationJournal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2009
3Understanding of hydrogen silsesquioxane electron resist for sub-5-nm-half-pitch lithographyJournal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2009
4Electron beam induced deposition of cobalt for use as single- and multiwalled carbon nanotube growth catalystJournal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2009
5Gold-tipped elastomeric pillars for cellular mechanotransductionJournal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2009

Talbot lithography: Self-imaging of complex structuresJournal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2009
Thermal stability of confined flip-chip laminated ω-functionalized monolayersJournal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2009
Robust, efficient grating couplers for planar optical waveguides using no-photoacid generator SU-8 electron beam lithographyJournal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2009
Near neighbor averaging: A technique for improving image uniformity in aperture array lithographyJournal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2009
Investigation of surface roughness of poly(methylmethacrylate) developed at reduced temperaturesJournal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2009

JMore from Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena

More from The University of Osaka

More from Mitsubishi Electric (Japan)