Subsolidus phase relationships in the Ga 2 O 3 –In 2 O 3 –SnO 2 system were studied by X‐ray diffraction over the temperature range 1250–1400°C. At 1250°C, several phases are stable in the ternary system, including Ga 2 O 3 ( ss ), In 2 O 3 ( ss ), SnO 2 , Ga 3− x In 5+ x Sn 2 O 16 , and several intergrowth phases that can be expressed as Ga 4−4 x In 4 x Sn n −4 O 2 n −2 where n is an integer. An In 2 O 3 –SnO 2 phase and Ga 4 SnO 8 form at 1375°C but are not stable at 1250°C. GaInO 3 did not form over the temperature range 1000–1400°C.
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Edwards et al. (1998) studied this question.
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