High Mobility Bilayer Metal–Oxide Thin Film Transistors Using Titanium-Doped InGaZnO

We report a high performance indium-gallium-zinc oxide (IGZO)/IGZO:Ti bilayer metal–oxide thin-film transistor (TFT) with a low drive voltage of< 2~ V. Compared with conventional IGZO TFTs, the novel bilayer metal–oxide TFTs through IGZO thickness modulation can reach the lowest off current of1.6× 10⁻¹¹~ A, smallest sub-threshold swing of 73 mV/decade, and highest mobility of 63cm²/Vs, which may create the potential application for high resolution display.