In this paper, we derive a relation between the current Iₜ transmitted by a thin dielectric film as a function of incident electron energy E and the electronic energy-band structure of the film, with application to solid xenon. The analysis of Iₜ(E) in the elastic scattering region allows one to determine the electronic conduction-band density of states and to calculate the electron mean free path as a function of energy. It provides also a useful tool for determining the quasi-free electron ground-state energy V₀ of the solid.
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Plenkiewicz et al. (1985) studied this question.
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