The electrical properties of epitaxial layers of CuGaTe2 on GaAs substrates are investigated as a function of the growth temperature. The layers are always p-type conducting and show an increase of the hole concentration with rising growth temperature. Two acceptor states with ionization energies of (140 ± 5) meV and about 450 meV are found. The results are discussed with regard to some general trends found in the Cu-III-VI2 compounds.
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Neumann et al. (1979) studied this question.
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