The motion of partials in Sic crystals is investigated in situ under the influence of the electron beam in the electron microscope. Such motion of partials is connected with kinks formation on the dislocations lines. It is found that the form of kinks for the cases of 30° and 90° dislocations is different. The model of kink formation under electron beam irradiation is discussed. The peculiarities of partial motion in Sic are compared with those of ZnS crystals.
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Pilyankevichand et al. (1984) studied this question.
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