Thin films of Ba(Zr0.15Ti0.85)O3 were crystallized in situ at several different oxygen background pressures and temperatures. The optimal temperature and pressure for obtaining films with smooth surface morphology and good electrical properties was found to be 675 °C and 300 mTorr, respectively. Films grown at this temperature were found to have a Pr of 3.31 μC/cm2 and an Ec of 93.5 kV/cm. Low field dielectric measurements and C-V measurements were performed in order to study the dielectric behavior of the films. A tunability of ∼45% was recorded on the films.
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A. R. James (2004) studied this question.
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