A novel small-signal model for bulk FinFETs is presented. A parallel combination of resistance-inductance networks originated from the self-heating is obtained. A new transfer gain model is developed. An analytical method to extract the model parameters is proposed. The model is validated using silicon Multi-Fin MOSFET manufactured in SMICs 14 nm bulk FinFET technology. Excellent agreements are achieved between measured and model simulated Y-parameters in the range over 100 to 50.2 GHz.
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Liu et al. (2017) studied this question.
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