We present a Raman study of elastic interface modes in InAs $/$GaSb superlattices from the viewpoint of their polarization selection rules. We show that one of the modes, which is strongly localized to the interfaces, can be used to probe sequentially grown interfaces in an independent and selective way. This opens up a promising new application area for Raman characterization of $AB/CD$ superlattices.
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Lyapin et al. (1995) studied this question.
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