Metal-oxide-semiconductor capacitors with a trilayer structure consisting of Ge+HfO2 layers sandwiched between HfO2 tunnel and cap oxides were fabricated on p-Si substrates. Ge nanocrystals embedded in SiO2 were also studied for comparison. Cross-sectional transmission electron micrographs revealed the formation of spherical shaped Ge nanocrystals. The optical and charge storage characteristics of trilayer structures were studied through photoluminescence spectroscopy and capacitance-voltage measurements, respectively. An enhancement of the charge injection capability into nanocrystals was observed for the device with HfO2 as tunnel and cap oxide. The optical emission characteristics support the carrier confinement in Ge nanocrystals embedded in oxide matrices.
No takes yet. Share an insight, caveat, or question.
Das et al. (2007) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: