Detailed characterization of chemical beam epitaxially (CBE) grown CdTe and Hg1−xCdxTe layers are reported. These characterizations include photoluminescence, infrared transmission, energy dispersive x-ray analysis, and variable temperature (10–300 K) Hall effect and resistivity measurements. The results indicate that high quality HgCdTe layers can be grown by CBE.
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Wagner et al. (1991) studied this question.