Multistate Logic Inverter Based on Black Phosphorus/SnSeS Heterostructure

Abstract van der Waals (vdW) heterostructures have attracted intensive attention due to their great potential in future functional electronic and optoelectronic devices. Here, a systematic electrical transport investigation on black phosphorus (BP)/SnSeS heterostructures is presented. The BP/SnSeS heterostructure shows diverse diode functional features by modulating BP channel length and back‐gate modulation, which is closely associated with the carrier tunneling at the heterojunction interface. The performances of the logic inverter based on the BP/SnSeS heterojunction are effectively enhanced by increasing the source voltage, and a middle state is observed with the increase of BP channel length. These findings could stimulate further research activities on vdW heterostructures for multiple functionality devices.